advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 200v low on-resistance r ds(on) 380m fast switching characteristics i d 8.6a description absolute maximum ratings symbol units v ds drain-source voltage v v gs gate-source voltage v i d @t c =25 continuous drain current, v gs @ 10v a i d @t c =100 continuous drain current, v gs @ 10v a i dm pulsed drain current 1 a p d @t c =25 total power dissipation w w/ e as single pulse avalanche energy 2 mj i ar avalanche current a t stg t j operating junction temperature range thermal data symbol value unit rthj-c thermal resistance junction-case max. 1.8 /w rthj-a thermal resistance junction-ambient max. 110 /w data & specifications subject to change without notice 201112031 storage temperature range -55 to 150 36 69 linear derating factor 0.55 8.6 5.5 parameter rating 200 AP09N20H/j 40 -55 to 150 parameter 8.6 30 g d s to-251(j) g d s to-252(h) the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-252 package is universally preferred for all commercial- industrial applications at power dissipation levels to approximately 50 watts. the through-hole version (ap09n20j) is available for low- profile applications. g d s free datasheet http:///
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =1ma 200 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.24 - v/ r ds(on) static drain-source on-resistance v gs =10v, i d =5a - - 380 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 2 - 4 v g fs forward transconductance v ds =10v, i d =5a - 3.7 - s i dss drain-source leakage current (t j =25 o c) v ds =200v, v gs =0v - - 10 ua drain-source leakage current (t j =150 o c) v ds =160v , v gs =0v - - 100 ua i gss gate-source leakage v gs =-- na q g total gate charge 3 i d =8.6a - 23 37 nc q gs gate-source charge v ds =160v - 4 - nc q gd gate-drain ("miller") charge v gs =10v - 13 - nc t d(on) turn-on delay time 3 v dd =100v - 12 - ns t r rise time i d =8.6a - 74 - ns t d(off) turn-off delay time r g =10 , v gs =10v - 36 - ns t f fall time r d =11.6 -44- ns c iss input capacitance v gs =0v - 500 800 pf c oss output capacitance v ds =25v - 90 - pf c rss reverse transfer capacitance f=1.0mhz - 40 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 3 i s =8.6a, v gs =0v - - 1.3 v t rr reverse recovery time i s =8.6a, v gs =0v, - 225 - ns q rr reverse recovery charge di/dt=100a/s - 2260 - nc notes: 1.pulse width limited by safe operating area. 2.starting t j =25 o c , v dd =50v , l=1mh , r g =25 , i as =8.6a. 3.pulse width < 300us , duty cycle < 2%. AP09N20H/j 30v 100
AP09N20H/j fig 1. typical output characteristics fig 2. typical output characteristics fig 3. normalized bv dss v.s. junction fig 4. normalized on-resistance temperature v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 0 1 2 3 -50 0 50 100 150 t j , junction temperature ( o c) normalized bv dss (v) 0 0.4 0.8 1.2 1.6 2 2.4 2.8 -50 0 50 100 150 t j , junction temperature ( o c ) normalized r ds(on) i d =5a v gs =10v 0 2 4 6 8 10 12 14 16 18 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 8.0v 7.0v 5.0v v g =4.0v 0 2 4 6 8 10 024681012 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 8.0v 7.0v v g =4.0v 5.0v 0 1 2 3 4 5 6 7 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 1 2 3 4 5 -50 0 50 100 150 t j , junction temperature ( o c ) v gs(th) (v)
AP09N20H/j fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fi g 10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 10v q gs q gd q g charge 10 100 1000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f =1.0mhz ciss coss crss 0 3 6 9 12 15 0 6 12 18 24 30 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =100v v ds =120v v ds =160v i d =8.6a 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 1 10 100 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c single pulse 1ms 10ms 100ms 1s dc
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